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IXFN25N90 - HiPerFET Power MOSFETs Single Die MOSFET

Download the IXFN25N90 datasheet PDF. This datasheet also covers the IXFN26N90 variant, as both devices belong to the same hiperfet power mosfets single die mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source.
  • International standard package.
  • miniBLOC, with Aluminium nitride isolation.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFN26N90_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFN25N80 (IXFx2xN80) HiPerFET Power MOSFETs IXYS Corporation
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IXFN23N100 (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFN200N06 HiPerFET Power MOSFETs
IXFN200N07 HiPerFET Power MOSFETs
IXFN200N10P Polar HiPerFET Power MOSFET
IXFN21N100Q Power MOSFET
IXFN220N20X3 Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G D VDSS 900 V 900 V ID (cont) 26 A 25 A RDS(on) 0.30 W 0.33 W trr 250 ns 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight Symbol Test Conditions 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 26N90 25N90 26N90 25N90 26N90 25N90 S S Maximum Ratings 900 900 ±20 ±30 26 25 104 100 26 25 64 3 5 600 -55 ...
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