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IXFH9N80Q - Power MOSFETs

Features

  • l IXYS advanced low Q process g l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Unclamped Inductive Switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 50 µA 1 mA 1.1 Ω Advantages l Easy to mount l Space savings l High power density © 1999 IXYS All rights reserved 98629 (.

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Full PDF Text Transcription

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q VDSS I D25 RDS(on) = 800 V = 9A = 1.1 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM I D25 I DM IAR EAR EAS dv/dt PD TJ TJM T stg TL Md Weight Symbol VDSS V GS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C T C = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings 800 V 800 V ±20 V ±30 V 9A 36 A 9A 20 mJ 700 mJ 5 V/ns 180 -55 ... +150 150 -55 ... +150 300 1.13/10 6 4 W °C °C °C °C Nm/lb.in.
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