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Preliminary Data Sheet
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on)
trr
IXFH8N80 800V 8A IXFH9N80 800V 9A
1.1Ω 250 ns 0.9Ω 250 ns
TO-247 AD (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR VGS VGSM ID25
IDM
IAR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
8N80 9N80 8N80 9N80 8N80 9N80
800
800
±20
±30
8 9 32 36 8 9
V
V
V
V
A A A A A A
EAR dv/dt
PD TJ TJM Tstg Md Weight
TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Mounting torque
18 mJ 5 V/ns
180 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 1.6 mm (0.
IXFH9N80 Datasheet
