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IXFH96N15P - PolarHT HiPerFET Power MOSFET

Download the IXFH96N15P datasheet PDF. This datasheet also covers the IXFV96N15P variant, as both devices belong to the same polarht hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C Characteristic Values Min. Typ. Max. 150 3.0 5.0 ±100 25 1000 24 V V nA µA µA mΩ z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFV96N15P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXFH 96N15P IXFV 96N15P IXFV 96N15PS VDSS ID25 trr RDS(on) =www.DataSheet4U.com 150 V = 96 A = 24 mΩ < 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 96 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C °C N/lb TO-247 (IXFH) G D S (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV__S) 1.6 mm (0.062 in.
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