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IXTQ64N25P - PolarHT Power MOSFET

Download the IXTQ64N25P datasheet PDF. This datasheet also covers the IXTT64N25P variant, as both devices belong to the same polarht power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z 1.13/10 Nm/lb. in. 5.5 5.0 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 5.0 ±100 25 250 48 V V nA µA µA mΩ z z z Easy to mount Space savings High power d.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTT64N25P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXTQ60N10T Power MOSFET IXYS
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IXTQ60N20L2 N-Channel MOSFET INCHANGE
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTQ62N15P PolarHT Power MOSFET
IXTQ69N30P Power MOSFET
IXTQ100N25P N-Channel MOSFET
IXTQ110N055P PolarHT Power MOSFET
IXTQ110N10P N-Channel MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ 64N25P IXTT 64N25P VDSS ID25 RDS(on) = 250 V = 64 A = 48 mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 250 250 ± 20 V V V A A A mJ J V/ns W °C °C °C °C TO-3P (IXTQ) TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 64 160 60 40 1.0 10 400 -55 ... +150 150 -55 ... +150 G D S (TAB) TO-268 (IXTT) G G = Gate S = Source S D = Drain TAB = Drain D (TAB) 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 Features z z 1.13/10 Nm/lb.in. 5.
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