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Advance Technical Information
TrenchTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTQ60N10T
VDSS = 100V ID25 = 60A RDS(on) ≤ 18.0mΩ
TO-3P
Symbol
VDSS VDGR
VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque
Maximum Ratings
100
V
100
V
± 30
V
60
A
180
A
10
A
500
mJ
176
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
5.
IXTQ60N10T Datasheet
