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IXTQ36N30P - Power MOSFET

Download the IXTQ36N30P datasheet PDF. This datasheet also covers the IXTA36N30P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2005 IXYS All rights reserved DS99155E(10/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS IXTA 36N30P IXTP 36N30P IXTQ 36N30P Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 12 22.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA36N30P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 300 V 36 A 110 mΩ Symbol Test Conditions TO-263 (IXTA) Maximum Ratings VDSS V DGR VGS VGSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg T L TSOLD Md Weight TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 300 V 300 V ±30 V ±40 V 36 A 90 A 36 A 30 mJ 1.0 J 10 V/ns 300 W -55 ... +150 °C 150 °C -55 ...
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