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High Current MegaMOSTMFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTK 62N25
VDSS =
ID25
=
= RDS(on)
250 V
62 A 35 mΩ
Symbol Test conditions
VDSS VDGR
VGS VGSM
ID25 IDM IAR
EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ
Continuous Transient
TC = 25°C
TTCC
= =
25°C, 25°C
pulse
width
limited
by
TJM
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264
Maximum ratings
250
V
250
V
±20
V
±30
V
62
A
248
A
62
A
45
mJ
1.5
J
5
V/ns
TO-264
G D S
D (TAB)
G = Gate S = Source
D = Drain Tab = Drain
390
-55 ... +150 150
-55 ... +150
300
0.7/6
10
W
°C °C °C °C Nm/lb.in.
IXTK62N25 Datasheet
