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IXTK600N04T2 - Power MOSFET

Features

  • z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C Characteristic Values Min. Typ. Max. 40 1.5 3.5 ± 200 V V nA z Easy to Mount Space Savings High Power Density.

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Full PDF Text Transcription

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Advance Technical Information TrenchT2TM GigaMOS TM Power MOSFET IXTK600N04T2 IXTX600N04T2 VDSS ID25 = = RDS(on) ≤ 40V 600A 1.5mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 40 40 ± 20 600 160 1600 200 3 1250 -55 ... +175 175 -55 ... +175 V V V A A A A J W °C °C °C °C °C Nm/lb.in. N/lb. g g G D S Tab PLUS247 (IXTX) G D S Tab G = Gate S = Source D = Drain Tab = Drain 1.6mm (0.062 in.
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