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IXTK60N50L2 - Power MOSFET

Download the IXTK60N50L2 datasheet PDF. This datasheet also covers the IXTX60N50L2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Designed for linear operation.
  • International standard packages.
  • Avalanche rated.
  • Guaranteed FBSOA at 75C Advantages.
  • Easy to mount.
  • Space savings.
  • High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTX60N50L2_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTK60N50L2 N-Channel MOSFET INCHANGE
IXTK62N25 Power MOSFET IXYS Corporation
IXTK68N20 Power MOSFET IXYS Corporation
IXTK100N25P N-Channel MOSFET IXYS Corporation
IXTK102N30P PolarHT Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTK600N04T2 Power MOSFET
IXTK102N65X2 Power MOSFET
IXTK110N20L2 Power MOSFET
IXTK120N20P PolarHT Power MOSFET
IXTK120N65X2 Power MOSFET

Full PDF Text Transcription

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LinearL2TM Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTK60N50L2 IXTX60N50L2 VDSS ID25 RDS(on) = 500V = 60A < 100m TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C 60 150 60 3 960 -55...+150 150 -55...+150 A A A J W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting torque (IXTK) Mounting Force (IXTX) 1.13/10 20..120 / 4.5..27 Nm/lb.
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