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Advanced Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTA 1N100 IXTP 1N100
VDSS ID25
RDS(on)
= 1000 V = 1.5 A = 11 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM
Maximum Ratings 1000 1000 ±20 ±30 1.5 6 1.5 V V V V A A A mJ mJ V/ns W °C °C °C
TO-220AB (IXTP)
GD
D (TAB) S
TO-263 AA (IXTA)
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C
6 200 3 54 -55 ... +150 150 -55 ... +150
G S D (TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
Mounting torque
1.13/10 Nm/lb.in.
IXTA1N100 Datasheet
