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IXGH42N30C3 - GenX3 300V IGBT

Download the IXGH42N30C3 datasheet PDF. This datasheet also covers the IXGA42N30C3 variant, as both devices belong to the same genx3 300v igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z z z Optimized for low switching losses Square RBSOA High current handling capability International standard packages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 25 500 ±100 1.54 1.54 1.85 TJ = 125°C V V μA μA nA V V Advantages z z High power density Low gate drive requirement VCE = VCES VGE = 0V VCE = 0V, VGE = ±20V IC = 42A, VGE = 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGA42N30C3_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGH40N30 HiPerFAST IGBT
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Full PDF Text Transcription

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GenX3TM 300V IGBT IXGA42N30C3 High Speed PT IGBTs for 50-150kHz switching IXGH42N30C3 IXGP42N30C3 VCES IC110 VCE(sat) tfi typ = = ≤ = 300V 42A 1.85V 65ns TO-263 (IXGA) Symbol VCES VCGR VGES VGEM IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C (chip capability) TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped inductive load @ ≤ 300V TC = 25°C Maximum Ratings 300 300 ±20 ±30 42 250 42 250 ICM = 84 223 -55 ... +150 150 -55 ... +150 V V V V A A A mJ A W °C °C °C °C °C Nm/lb.in. g g g G C C (TAB) E C = Collector TAB = Collector G C E C (TAB) G E C (TAB) TO-247 (IXGH) TO-220 (IXGP) Maximum lead temperature for soldering 1.
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