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IXGH40N120C3D1 - High Speed PT IGBT

Features

  • z Optimized for Low Conduction Losses z Square RBSOA z Avalanche Rated z Anti-Parallel Ultra Fast Diode z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription

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Preliminary Technical Information GenX3TM C3-Class IGBT w/Diode High Speed PT IGBT for 20 - 50 kHz Switching IXGH40N120C3D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 1200V 40A 4.4V 57ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 3Ω Clamped inductive load TC = 25°C Mounting Torque Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Maximum Ratings 1200 V 1200 V ±20 V ±30 V 75 A 40 A 25 A 180 A 30 A 500 mJ ICM = 80 A @VCE <1200 V 380 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.
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