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IXGH40N120A2 - High Voltage IGBT

Features

  • International standard packages.
  • Low VCE(sat) - for minimum on-state conduction losses.
  • MOS Gate turn-on - drive simplicity.

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High Voltage IGBT Low VCE(sat) Preliminary Data Sheet IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 IXGT 40N120A2 V = 1200 I CES = 75 V ≤C25 CE(sat) 2.0 V A V Symbol Test Conditions Maximum Ratings VCES VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TTJsMtg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C Continuous Transient TC = 25°C, IGBT chip capability TC = 110°C TJ ≤ 150°C, tp < 300 μs VGE = 15 V, TVJ = 150°C, RG = 5 Ω Clamped inductive load, VCE < 960 V TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 seconds Plastic body for 10 seconds Mounting torque (ixgh) (IXGH) (IXGT) 1200 1200 ± 20 ± 30 75 40 160 ICM = 80 V V V V A A A A 360 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C 260 °C 1.3/10 Nm/lb.in. 6.0 g 4.
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