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IXGH40N120C3 - High speed PT IGBT

Features

  • z International standard packages: JEDEC TO-247AD z IGBT and anti-parallel FRED in one package z MOS Gate turn-on - drive simplicity.

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Full PDF Text Transcription

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Preliminary Technical Information GenX3TM 1200V IGBT IXGH40N120C3 High speed PT IGBTs for 20 - 50 kHz switching VCES = IC110 = VCE(sat) ≤ tfi(typ) = 1200V 40A 4.4V 57ns Symbol VCES V CGR VGES VGEM IC25 I C110 I CM IA EAS SSOA (RBSOA) PC TJ TJM Tstg Md TL T SOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 3Ω Clamped inductive load @VCE≤ 1200V TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Maximum Ratings 1200 V 1200 V ±20 V ±30 V 75 A 40 A 200 A 30 A 500 mJ ICM = 80 A 380 -55 ... +150 150 -55 ... +150 1.13 / 10 300 260 6 W °C °C °C Nm/lb.in.
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