Click to expand full text
Preliminary data
HiP erF AST HiPerF erFAST with Diode
Combi P ac k Pac ack
TM
IGBT
IXGH22N50B U1 IXGH22N50BU1 IXGH22N50B U1S IXGH22N50BU1S
VCES IC(25) VCE(sat)typ tfi(typ)
TO-247 SMD*
= 500 V = 44 A = 2.1 V = 55 ns
www.DataSheet4U.com
Symbol
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C
Maximum Ratings 500 500 ±20 ±30 44 22 88 ICM = 44 @ 0.8 VCES 150 -55 ... +150 150 -55 ...