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IXFN27N80 - (IXFx2xN80) HiPerFET Power MOSFETs

Download the IXFN27N80 datasheet PDF. This datasheet also covers the IXFK25N80 variant, as both devices belong to the same (ixfx2xn80) hiperfet power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • G D S (TAB) miniBLOC, SOT-227 B (IXFN) E153432 D G S G S S S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source -55 +150 Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 0.096 2 -0.214 ±200 TJ = 25°C TJ = 125°C 25N80 27N80 500 2 0.35 0.30 4.5 V %/K.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK25N80_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXFN27N120SK SiC Power MOSFET IXYS
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFN27N80Q Power MOSFET
IXFN20N120 HiPerFET Power MOSFETs
IXFN20N120P Polar Power MOSFET HiPerFET
IXFN230N10 Power MOSFET
IXFN23N100 (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com Not for New Designs VDSS ID25 27 A 25 A 27 A 25 A RDS(on) 0.30 0.35 0.30 0.35 Ω Ω Ω Ω HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK IXFK IXFN IXFN 27N80 25N80 27N80 25N80 800 800 800 800 V V V V TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Symbol Test Conditions 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 0.
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