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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V
ID25
RDS(on)
67 A 25 mW 75 A 20 mW
trr £ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 67N10 75N10 67N10 75N10 67N10 75N10
Maximum Ratings 100 100 ±20 ±30 67 75 268 300 67 75 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W °C °C °C °C
TO-247 AD (IXFH)
(TAB)
TO-204 AE (IXFM)
D G = Gate, S = Source,
G
D = Drain, TAB = Drain
1.6 mm (0.062 in.
IXFM67N10 Datasheet
