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IXFK26N90 - Power MOSFET

Download the IXFK26N90 datasheet PDF. This datasheet also covers the IXFK25N90 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International standard packages z Avalanche Rated z Low package inductance z Low RDS(ON) HDMOS Process z Fast intrinsic diode Advantages z Easy to mount z Space savings z High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK25N90_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFK26N60Q HiPerFET Power MOSFET IXYS
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IXFK200N10P Polar HiPerFET Power MOSFET IXYS
IXFK210N17T GigaMOS Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFK20N120 HiPerFET Power MOSFETs
IXFK20N120P Power MOSFET
IXFK20N80Q Power MOSFET
IXFK21N100F Power MOSFET
IXFK220N15P Polar Power MOSFET HiperFET

Full PDF Text Transcription

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 Symbol VDSS VDGR VGSS VGSM ID25 IDM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (IXFK) Mounting force (IXFX) TO-264 TO-247 Maximum Ratings 900 V 900 V ± 20 V ± 30 V 25N90 25 A 25N90 100 A 26N90 26 A 26N90 104 A 25N90 25 A 26N90 26 A 3 J 5 V/ns 560 -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120 /4.5..
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