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IXFH7N90Q - Power MOSFET

Features

  • z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Unclamped Inductive Switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 50 µA 1 mA 1.5 Ω Advantages z Easy to mount z Space savings z High power density © 2002 IXYS All rights reserved DS98645A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS(on) = 900 V = 7A = 1.5 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings 900 V 900 V ±20 V ±30 V 7 A 28 A 7 A 20 mJ 700 mJ 5 V/ns 180 -55 ... +150 150 -55 ... +150 300 1.13/10 6 4 W °C °C °C °C Nm/lb.in.
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