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IXFH76N15T2 - Power MOSFET

Download the IXFH76N15T2 datasheet PDF. This datasheet also covers the IXFP76N15T2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • 175°C Operating Temperature.
  • High Current Handling Capability.
  • Fast Intrinsic Rectifier.
  • Dynamic dv/dt Rated.
  • Low RDS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFP76N15T2_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH76N15T2 N-Channel MOSFET INCHANGE
IXFH76N06-11 Power MOSFET IXYS Corporation
IXFH76N06-12 Power MOSFET IXYS Corporation
IXFH76N07-11 Power MOSFET IXYS Corporation
IXFH76N07-12 Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH70N30Q3 Power MOSFET
IXFH75N10Q POWER MOSFETS
IXFH7N100P Power MOSFET
IXFH100N25P PolarHT HiPerFET Power MOSFET
IXFH100N30X3 N-Channel Power MOSFET

Full PDF Text Transcription

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TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM,, VDD  VDSS,TJ  175C TC = 25C 76 200 38 500 15 350 -55 ... +175 175 -55 ... +175 A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.
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