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IXFH7N100P - Power MOSFET

Download the IXFH7N100P datasheet PDF. This datasheet also covers the IXFP7N100P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Fast Intrinsic Rectifier.
  • Avalanche Rated.
  • Low R and Q DS(ON) G.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFP7N100P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH7N80 Power MOSFET IXYS Corporation
IXFH7N90 Power MOSFET IXYS Corporation
IXFH7N90Q Power MOSFET IXYS Corporation
IXFH70N15 Power MOSFET IXYS Corporation
IXFH74N20 Power MOSFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH70N30Q3 Power MOSFET
IXFH75N10Q POWER MOSFETS
IXFH76N15T2 Power MOSFET
IXFH100N25P PolarHT HiPerFET Power MOSFET
IXFH100N30X3 N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
Polar TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7N100P IXFP7N100P IXFH7N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 7 18 7 300 10 300 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.
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