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IXFH74N20P - PolarHT HiPerFET Power MOSFET

Download the IXFH74N20P datasheet PDF. This datasheet also covers the IXFV74N20P variant, as both devices belong to the same polarht hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.5 5.0 ±100 25 250 34 V V nA µA µA mΩ Advantages z z z z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Eas.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFV74N20P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH74N20 Power MOSFET
IXFH70N15 Power MOSFET
IXFH75N10 Power MOSFET
IXFH76N06-11 Power MOSFET
IXFH76N06-12 Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Preliminary Data Sheet IXFH 74N20P IXFV 74N20P IXFV 74N20PS VDSS ID25 trr RDS(on) = = = ≤ 200 74 34 200 V A mΩ ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 74 200 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 V V V V A A A mJ J V/ns TO-247 (IXFH) G D S D (TAB) PLUS220 (IXFV) G W °C °C °C °C °C D S D (TAB) PLUS220SMD (IXFV-PS) 1.6 mm (0.062 in.
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