Datasheet4U Logo Datasheet4U.com

IXFC36N50P - Polar MOSFETs

Features

  • z International standard isolated packages z UL recognized packages z Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT TJ = 125°C Characteristic Values Min. Typ. Max. 500 2.5 5.0 ± 100 25 250 190 V V nA μA μA mΩ z z z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolat.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFC110N10P PolarHT HiPerFET Power MOSFET IXYS
IXFC16N50P PolarHV HiPerFET Power MOSFET IXYS
IXFC26N50P PolarHV HiPerFET Power MOSFET IXYS
IXFC74N20P Power MOSFET IXYS
IXF18102 10Gbps Physical Layer Device Intel Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFC30N60P Polar MOSFETs
IXFC30N60P PolarHV HiPerFET Power MOSFET
IXFC12N80P PolarHV HiPerFET Power MOSFET ISOPLUS220
IXFC13N50 HiPerFET MOSFET ISOPLUS220
IXFC14N60P PolarHV HiPerFET Power MOSFET

Full PDF Text Transcription

Click to expand full text
Advance Technical Information PolarHVTM HiPerFET Power MOSFET www.datasheet4u.com IXFC 36N50P IXFR 36N50P VDSS ID25 (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = RDS(on) ≤ ≤ trr 500 18 190 250 V A mΩ ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 18 100 24 50 1.5 20 156 -55 ... +150 150 -55 ...
Published: |