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IXFC110N10P - PolarHT HiPerFET Power MOSFET

Features

  • z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Advantages z z ISOPLUS220TM (IXFC) E153432 G D S TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C G = Gate S = Source D = Drain 1.6 mm (0.062 in. ) from.

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Full PDF Text Transcription

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PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C IXFC 110N10P VDSS ID25 RDS(on) = 100 V = 66 A = 17 mΩ www.DataSheet4U.com Maximum Ratings 100 100 ± 20 ± 30 66 250 60 40 1.0 10 158 -55 ... +175 175 -55 ...
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