Datasheet4U Logo Datasheet4U.com

IXFC74N20P - Power MOSFET

Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

📥 Download Datasheet

Full PDF Text Transcription

Click to expand full text
PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) V= DSS ID25 = = RDS(on) trr ≤ 200 V 35 A 36 mΩ 200 ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS 220TM E153432 V DSS VDGR VGS V GSM ID25 IDM IAR EAR EAS dv/dt P D TJ TJM T stg T L VISOL FC Weight T J = 25°C to 175°C 200 TJ = 25°C to 175°C; RGS = 1 MΩ 200 Continuous ±20 Transient ±30 TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω T C = 25°C 35 200 60 40 1.0 10 120 -55 ... +175 175 -55 ... +150 1.6 mm (0.062 in.) from case for 10 s 300 50/60 Hz, RMS, IISOL ≤ 1 mA, t = 1 minute 2500 Mounting Force 11..65 / 2.5..
Published: |