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IXFC30N60P - PolarHV HiPerFET Power MOSFET

Download the IXFC30N60P datasheet PDF. This datasheet also covers the IXFR30N60P variant, as both devices belong to the same polarhv hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFR30N60P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFC30N60P Polar MOSFETs
IXFC36N50P Polar MOSFETs
IXFC12N80P PolarHV HiPerFET Power MOSFET ISOPLUS220
IXFC13N50 HiPerFET MOSFET ISOPLUS220
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Full PDF Text Transcription

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PolarHVTM HiPerFET Power MOSFET IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net VDSS = 600 V ID25 = 15 A RDS(on) ≤ 250 mΩ ≤ 250 ns trr Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 3 Ω TC = 25°C Maximum Ratings 600 600 ±30 ±40 15 80 30 50 1.5 10 166 -55 ... +150 150 -55 ...
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