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IS42SM16800E - 128Mb Mobile Synchronous DRAM

Download the IS42SM16800E datasheet PDF. This datasheet also covers the IS42SM81600E variant, as both devices belong to the same 128mb mobile synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Description

ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture.

All input and output signals refer to the rising edge of the clock input.

Both write and read accesses to the SDRAM are burst oriented.

Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and precharge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).
  • TCSR (Temperature Compensated Self Refresh).
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full.
  • Deep.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42SM81600E_ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS42S16100 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM Integrated Silicon Solution
IS42S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42S16128 128K words x 16 Bits x 2 Banks SDRAM Integrated Silicon
IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS42S16160B 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42SM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42SM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42SM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42SM16400G 1M x 16Bits x 4Banks Low Power Synchronous DRAM
IS42SM16400K 1M x 16Bits x 4Banks Mobile Synchronous DRAM

Full PDF Text Transcription

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IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full Page • Programmable Burst Sequence: • Sequential and Interleave • Auto Refresh (CBR) • TCSR (Temperature Compensated Self Refresh) • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full • Deep Power Down Mode (DPD) • Driver Strength Control (DS): 1/4, 1/2, and Full APRIL 2011 DESCRIPTION ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture.
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