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IS42SM16200C - 1M x 16Bits x 2Banks Low Power Synchronous DRAM

Description

These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • Programmable Driver Strength Control - Full Strength or 1/2, 1/4, 1/8 of Full Strength.
  • Deep Power Down Mode.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42SM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42SM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42SM16400G 1M x 16Bits x 4Banks Low Power Synchronous DRAM
IS42SM16400K 1M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42SM16800E 128Mb Mobile Synchronous DRAM

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IS42SM16200C IS42RM16200C IS42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features  JEDEC standard 3.3V, 2.5V, 1.8V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 4K refresh cycle / 64ms. • Programmable Burst Length and Burst Type.
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