SPP11N60S5 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤3mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	SPP11N60S5
Manufacturer	INCHANGE
File Size	232.53 KB
Description	N-Channel MOSFET
Datasheet	SPP11N60S5 Datasheet
Additional preview pages of the SPP11N60S5 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 22 PD Total Dissipation @TC=25℃ 125 Tj Max.

Published: Dec 3, 2020 |