SPP15N60C3 - N-Channel MOSFET

Features

Ultra low effective capacitances.
Low gate charge.
Improved transconductance.
Low gate drive power loss.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	SPP15N60C3
Manufacturer	INCHANGE
File Size	200.80 KB
Description	N-Channel MOSFET
Datasheet	SPP15N60C3 Datasheet
Additional preview pages of the SPP15N60C3 datasheet.

📁 Similar Datasheet

SPP15N60C3 - Power Transistor (Infineon Technologies)
SPP15N60CFD - Power Transistor (Infineon)
SPP15N65C3 - Power Transistor (Infineon Technologies)
SPP15P10P - Small-Signal-Transistor (Infineon Technologies)
SPP15P10PH - Small-Signal-Transistor (Infineon)
SPP100N03S2-03 - OptiMOS Power-Transistor (Infineon Technologies)
SPP100N03S2L-03 - OptiMOS Power-Transistor (Infineon Technologies)
SPP100N04S2-04 - OptiMOS Power-Transistor (Infineon Technologies)
SPP100N04S2L-03 - OptiMOS Power-Transistor (Infineon Technologies)
SPP100N06S2-05 - OptiMOS Power-Transistor (Infineon Technologies)

Other Datasheets by INCHANGE

SPP15N60CFD - N-Channel MOSFET
SPP15P10P - N-Channel MOSFET
SPP11N60C3 - N-Channel MOSFET
SPP11N60CFD - N-Channel MOSFET
SPP11N60S5 - N-Channel MOSFET
SPP11N65C3 - N-Channel MOSFET
SPP11N80C3 - N-Channel MOSFET
SPP12N50C3 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP15N60C3 ·FEATURES ·Ultra low effective capacitances ·Low gate charge ·Improved transconductance ·Low gate drive power loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 15 9.

Published: Sep 2, 2020 |