SPP12N50C3 - N-Channel MOSFET

Features

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Static drain-source on-resistance: RDS(on) ≤0.38Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	SPP12N50C3
Manufacturer	INCHANGE
File Size	243.60 KB
Description	N-Channel MOSFET
Datasheet	SPP12N50C3 Datasheet
Additional preview pages of the SPP12N50C3 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor SPP12N50C3，ISPP12N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·New revolutionary high voltage technology ·Ultra low effective capacitance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11.6 IDM Drain Current-Single Pulsed 34.8 PD Total Dissipation @TC=25℃ 125 Tj Max.

Published: Oct 14, 2020 |