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Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPP11N60S5 SPI11N60S5
VDS RDS(on)
ID
600 V 0.38 Ω 11 A
PG-TO262
PG-TO220
2
P-TO220-3-1
23 1
Type SPP11N60S5 SPI11N60S5
Package PG-TO220 PG-TO262
Ordering Code Q67040-S4198 Q67040-S4338
Marking 11N60S5 11N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 5.
SPP11N60S5 Datasheet
