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INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS=500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.19Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
20.2 12.7
A
IDM
Drain Current-Single Pulsed
57
A
PD
Total Dissipation @TC=25℃
151
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth(ch-c) Channel-to-case thermal resistance
3.
IPA60R190P6 Datasheet
