IPA60R190C6 - N-Channel MOSFET

Datasheet Summary

Features

With TO-220F packaging.
High speed switching.
Very high commutation ruggedness.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

INCHANGE

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Datasheet Details

Part number	IPA60R190C6
Manufacturer	INCHANGE
File Size	199.05 KB
Description	N-Channel MOSFET
Datasheet	IPA60R190C6 Datasheet
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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R190C6 ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages, hard switching PWM stages and resonant switching ·PC Silverbox, Adapter, LCD & PDP TV ·Lighting, Server, Telecom and UPS ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 20.2 12.

Published: Sep 2, 2020 |