IPA60R120C7 - N-Channel MOSFET

Datasheet Summary

Features

With TO-220F package.
Low input capacitance and gate charge.
Low gate input resistance.
Reduced switching and conduction losses.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IPA60R120C7
Manufacturer	INCHANGE
File Size	197.32 KB
Description	N-Channel MOSFET
Datasheet	IPA60R120C7 Datasheet
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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA60R120C7 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 11 7 68 PD Total Dissipation @TC=25℃ 32 Tj Max.

Published: Sep 2, 2020 |