IPA60R120P7 - MOSFET

Datasheet Summary

Description

Features

Suitable for hard and soft switching (PFC and LLC) due to an outstanding  commutation ruggedness.
Significant reduction of switching and conduction losses.
Excellent ESD robustness >2kV (HBM) for all products.
Better RDS(on)/package products compared to competition enabled by a  low RDS(on).
A (below 1Ohm.
mm²) Benefits.
Ease of use and fast design-in through low ringing tendency and usage  across PFC and PWM stages.
Simplified ther.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IPA60R120P7
Manufacturer	Infineon
File Size	1.08 MB
Description	MOSFET
Datasheet	IPA60R120P7 Datasheet
Additional preview pages of the IPA60R120P7 datasheet.

📁 Similar Datasheet

IPA60R120P7 - N-Channel MOSFET (INCHANGE)
IPA60R120C7 - N-Channel MOSFET (INCHANGE)
IPA60R125C6 - MOSFET (Infineon Technologies)
IPA60R125C6 - N-Channel MOSFET (INCHANGE)
IPA60R125CP - Power-Transistor (Infineon Technologies)
IPA60R125CP - N-Channel MOSFET (INCHANGE)
IPA60R125P6 - N-Channel MOSFET (INCHANGE)
IPA60R160C6 - MOSFET (Infineon Technologies)
IPA60R160C6 - N-Channel MOSFET (INCHANGE)
IPA60R160P6 - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon

IPA60R120C7 - MOSFET
IPA60R125P6 - MOSFET
IPA60R160P6 - MOSFET
IPA60R170CFD7 - Power-Transistor
IPA60R180C7 - 600V MOSFET
IPA60R180P7 - 600V MOSFET
IPA60R180P7S - MOSFET
IPA60R190P6 - MOSFET

Full PDF Text Transcription

Click to expand full text

IPA60R120P7 MOSFET 600VCoolMOSªP7PowerDevice TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentESDcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler.

Published: Sep 6, 2018 |