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BDY39 - NPN Transistor

Description

Excellent Safe Operating Area DC Current Gain- : hFE=25-100@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max)@ IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power AF output s

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Datasheet Details

Part number BDY39
Manufacturer Inchange Semiconductor
File Size 203.25 KB
Description NPN Transistor
Datasheet download datasheet BDY39 Datasheet
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isc Silicon NPN Power Transistor BDY39 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=25-100@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power AF output stages and in stabilized power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22.
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