BDY20 - Silicon NPN Power Transistor

Description

Excellent Safe Operating Area DC Current Gain -hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1V(Max)@ IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and am

Inchange Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	BDY20
Manufacturer	Inchange Semiconductor
File Size	208.49 KB
Description	Silicon NPN Power Transistor
Datasheet	BDY20 Datasheet
Additional preview pages of the BDY20 datasheet.

📁 Similar Datasheet

BDY20 - Bipolar NPN Device (Seme LAB)
BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)
BDY23 - Bipolar NPN Device (Seme LAB)
BDY23A - Bipolar NPN Device (Seme LAB)
BDY23B - Bipolar NPN Device (Seme LAB)
BDY23C - Bipolar NPN Device (Seme LAB)
BDY24 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)
BDY24B - Bipolar NPN Device (Seme LAB)
BDY24C - Bipolar NPN Device (Seme LAB)
BDY25 - Bipolar NPN Device (Seme LAB)

Other Datasheets by Inchange Semiconductor

BDY23 - Silicon NPN Power Transistor
BDY24 - Silicon NPN Power Transistor
BDY25B - Silicon NPN Power Transistor
BDY26C - Silicon NPN Power Transistor
BDY13-6 - Silicon NPN Power Transistor
BDY53 - Silicon NPN Power Transistor
BDY54 - Silicon NPN Power Transistor
BDY55X - Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain -hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

Published: Jun 26, 2016 |