Datasheet4U Logo Datasheet4U.com

BDY23 - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 2A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe am

📥 Download Datasheet

Datasheet preview – BDY23

Datasheet Details

Part number BDY23
Manufacturer Inchange Semiconductor
File Size 211.60 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BDY23 Datasheet
Additional preview pages of the BDY23 datasheet.

📁 Similar Datasheet

  • BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)
  • BDY23 - Bipolar NPN Device (Seme LAB)
  • BDY23A - Bipolar NPN Device (Seme LAB)
  • BDY23B - Bipolar NPN Device (Seme LAB)
  • BDY23C - Bipolar NPN Device (Seme LAB)
  • BDY20 - Bipolar NPN Device (Seme LAB)
  • BDY24 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)
  • BDY24B - Bipolar NPN Device (Seme LAB)
  • BDY24C - Bipolar NPN Device (Seme LAB)
  • BDY25 - Bipolar NPN Device (Seme LAB)
Other Datasheets by Inchange Semiconductor
  • BDY20 - Silicon NPN Power Transistor
  • BDY24 - Silicon NPN Power Transistor
  • BDY25B - Silicon NPN Power Transistor
  • BDY26C - Silicon NPN Power Transistor
  • BDY13-6 - Silicon NPN Power Transistor
  • BDY53 - Silicon NPN Power Transistor
  • BDY54 - Silicon NPN Power Transistor
  • BDY55X - Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor BDY23 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IB Base Current PC Collector Dissipation@TC=25℃ TJ Junction Temperature 3 A Power 87.
Published: |