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BDY29 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 75V (Min) Low Collector-Emitter Saturation Voltage Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power ,high current and

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Datasheet Details

Part number BDY29
Manufacturer Inchange Semiconductor
File Size 199.54 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 75V (Min) ·Low Collector-Emitter Saturation Voltage ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power ,high current and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 75 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7.
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