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HY5DU283222F - 128M(4Mx32) GDDR SDRAM

Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • 2.5V +/- 5% VDD and VDDQ power supply supported up to 300/275/250/200MHz 2.9V +/- 5% VDD and VDDQ power supply supported up to 350/375MHz All inputs and outputs are compatible with SSTL_2 interface 12mm x 12mm, 144ball FBGA with 0.8mm pin pitch Fully differential clock inputs (CK, /CK) operation Double data rate interface Source synchronous - data transaction aligned to bidirectional data strobe (DQS0 ~ DQS3) Data ou.

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HY5DU283222AF 128M(4Mx32) GDDR SDRAM
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HY5DU283222BFP 128M(4Mx32) GDDR SDRAM
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Full PDF Text Transcription

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www.DataSheet4U.com HY5DU283222F 128M(4Mx32) GDDR SDRAM HY5DU283222F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Sep. 02 1 HY5DU283222F Rvision History Revision No. 0.4 History 1) Part Number changed from HY5DU283222F to HY6U22F 1) tAC/tDQSCK, tRCD/tRP parameters each speed changed as the followings a) tAC : changed from 0.7ns to 0.9ns at 3.3/4/4.5ns b) tDQSCK : changed from 0.6ns to 0.7ns at 3.3/4/4.5ns c) tRCD/tRP : changed from 5clk to 6clk at 3.3ns and 4clk to 5clk at 4/4.
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