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HY5DU283222BF(P)
128M(4Mx32) GDDR SDRAM
HY5DU283222BF(P)
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Feb. 2005
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1HY5DU283222BF(P)
Revision History
No. History 0.1 1) Defined Target Spec. 0.2 1) Added 200MHz speed bin 0.3 1) Changed Cas Latency to 4 clock from 5 clock at 300Mhz/275Mhz/
250Mhz speed bin
0.4 1) Changed IDD & 500Mhz speed bin insert, 2) Changed tRCDWR, tWR at 450Mhz speed bin
1.0 1) Changed IDD Spec. 2) Changed CAS Latency to 4 clock from 5 clock at 350MHz speed bin
Draft Date Jun. 2004 Jun. 2004
Sep. 2004
Remark
Oct. 2004
Feb. 2005
Rev. 1.0 / Feb.