4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
D
1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SK3150(L),2SK3150(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current www. datasheet4u. com Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3150. For precise diagrams, and layout, please refer to the original PDF.
2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching www.datasheet4u.com ADE-208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance R...
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208-750A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3150(L),2SK3150(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.datasheet4u.
More Datasheets from Hitachi Semiconductor (now Renesas)
K3150 Datasheet
