4 V gate drive device can be driven from 5 V source
Outline
TO.
220CFM
D
G 1 2 3
S
1. Gate 2. Drain 3. Source
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2SK3140
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperatu.
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K3140. For precise diagrams, and layout, please refer to the original PDF.
2SK3140 Silicon N Channel MOS FET High Speed Power Switching ADE-208-767C (Z) 4th. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive cur...
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1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source http://www.Datasheet4U.com 2SK3140 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Note 3 Note 3 Note 1 Ratings 60 ±20 60 240 60 50 214 35 150 –55 to +150 Unit V V A A A A mJ W °C °C Pc
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K3140 Datasheet
