4 V gate drive device can be driven from 5 V source
Outline
TO.
220CFM
ADE-208-681A (Z) 2nd. Edition
February 1999
D
G
123
1. Gate
2. Drain
3. Source
S
2SK3142
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS VGSS I.
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K3142. For precise diagrams, and layout, please refer to the original PDF.
2SK3142 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven fr...
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4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM ADE-208-681A (Z) 2nd. Edition February 1999 D G 123 1. Gate 2. Drain 3. Source S 2SK3142 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID I Note 1 D(pulse) I DR I Note 3 AP E Note 3 AR Pch Note 2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
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