Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1163, 2SK1164
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1163 2SK1164 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage tempe.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K1164. For precise diagrams, and layout, please refer to the original PDF.
2SK1163, 2SK1164 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary...
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Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1163, 2SK1164 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1163 2SK1164 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
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K1164 Datasheet
