Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1157, 2SK1158
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel tempe.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K1158. For precise diagrams, and layout, please refer to the original PDF.
2SK1157, 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary...
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Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
K1158 Datasheet
