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K1154 - 2SK1154

Download the K1154 datasheet PDF. This datasheet also covers the K1153 variant, as both devices belong to the same 2sk1154 family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No secondary breakdown.
  • Suitable for switching regulator and DC-DC converter Outline TO-220AB D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK1153, 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1153 2SK1154 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Stor.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K1153-HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K1154 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K1154. For precise diagrams, and layout, please refer to the original PDF.

2SK1153, 2SK1154 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary b...

View more extracted text
resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-220AB D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK1153, 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1153 2SK1154 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.