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HSB83YP - Silicon Epitaxial Planar Diode for High Voltage Switching

Features

  • High reverse voltage. (VR=250V).
  • CMPAK- 4 package which has two devices parallel connection, is suitable for high density surface mounting. Ordering Information Type No. HSB83YP Laser Mark F7 Package Code CMPAK-4 Outline 4 3 1 2 (Top View) 1 2 3 4 Anode Anode Cathode Cathode HSB83YP Absolute Maximum Ratings (Ta = 25°C).
  • 2 Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction tempera.

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Full PDF Text Transcription

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HSB83YP Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-843(Z) Rev 0 Mar 2000 Features • High reverse voltage. (VR=250V) • CMPAK- 4 package which has two devices parallel connection, is suitable for high density surface mounting. Ordering Information Type No. HSB83YP Laser Mark F7 Package Code CMPAK-4 Outline 4 3 1 2 (Top View) 1 2 3 4 Anode Anode Cathode Cathode HSB83YP Absolute Maximum Ratings (Ta = 25°C) *2 Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note Note Symbol VRM VR I FM I FSM IO Tj Tstg *1 Value 300 250 300 2 100 125 -55Å`+125 Unit V V mA A mA °C °C 1. Value at duration of 10msec. 2. Two device total.
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